2SA1415 Datasheet

PNP Epitaxial Planar Silicon Transistor, High-voltage Switching, Predriver Application


Features, Applications


Adoption of FBET process. High breakdown voltage (VCEO=160V). Excellent linearity of hFE and small Cob. Fast switching speed. Very small size marking it easy to provide highdensity, small-sized hybrid ICs.


Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC2 Tj Tstg Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) ton tstg IC=(�)50mA, IB=(�)5mA See sepcified Test Circuit. See sepcified Test Circuit. See sepcified Test Circuit. Conditions Ratings min typ max (�)100 400* MHz V �s Unit nA

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(For PNP, the polarity is reversed) Unit (resistance : , capacitance : F)



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