Homedatasheet2SA1882

2SA1882 Datasheet

PNP Epitaxial Planar Silicon Transistor, Low-frequency, Amp Application
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Description

Features, Applications

Low-frequency power amplifier applications. Medium-speed switching. Small-sized motor drivers.
Features
Large current capacity. Low collector-to-emitter saturation voltage.
Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE2 fT Cob IC=(�)50mA IC=(�)1A MHz pF Conditions Ratings min typ max (�)100 560* Unit nA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat)1 VCE(sat)2 VBE(sat) Conditions (�)15 (�)5 Ratings min typ (�)120 (�)0.9 max (�)240 (�)1.2 Unit mV






Features

Parameters

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Manufacturer information

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