Homedatasheet2SB0819

2SB0819 Datasheet

V<SUB>CEO</SUB>(V) = -40 ;; I<SUB>C</SUB>(A) = -1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = M-A1
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Description

Features, Applications

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature

Note) Print circuit board: Copper foil area 1 or more, and the board thickness 1.7 mm for the collector portion

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited)

Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE to 220 Note) The part number in the parenthesis shows conventional part number.

High collector-emitter voltage (Base open) VCEO Large collctor power dissipation PC M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Features
Copper plate at the collector is more than cm2 in area, mm in thickness

Collector output capacitance C (pF) (Common base, input open circuited) ob


Features

Parameters

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Manufacturer information

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