Homedatasheet2SB1197KT146R

2SB1197KT146R Datasheet

Transistors (BJT) - Single
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Description

The description of 2SB1197KT146R is Transistors Bipolar - BJT PNP 32V 0.8A 2SB1197KT146R Features • Low VCE(sat).• IC = 0.8A.• Complements the 2SD1781K. 2SB1197KT146R Applications • Epitaxial planar type• PNP silicon transistor
Features

Parameters

[{"Name":"Current - Collector (Ic) (Max)","Value":"800mA"},{"Name":"Voltage - Collector Emitter Breakdown (Max)","Value":"32V"},{"Name":"Vce Saturation (Max) @ Ib, Ic","Value":"500mV @ 50mA, 500mA"},{"Name":"Current - Collector Cutoff (Max)","Value":"500nA (ICBO)"},{"Name":"DC Current Gain (hFE) (Min) @ Ic, Vce","Value":"120 @ 100mA, 3V"},{"Name":"ower - Max","Value":"200mW"},{"Name":"requency - Transition","Value":"200MHz"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SILICON LABORATORIES
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