Homedatasheet2SB1386T100R

2SB1386T100R Datasheet

Transistors
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Description

2SB1386T100R Transistors Bipolar - BJT PNP 20V 5A 2SB1386T100R Features •Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) •Excellent DC current gain characteristics. •Complements the 2SD2118.
Features

Parameters

[{"Name":" Collector- Base Voltage VCBO:","Value":"- 30 V"},{"Name":"- 30 V","Value":"- 20 V"},{"Name":"Emitter- Base Voltage VEBO:","Value":"- 6 V"},{"Name":"Maximum DC Collector Current:","Value":"5 A"},{"Name":" Gain Bandwidth Product fT:","Value":"120 MHz"},{"Name":"DC Collector/Base Gain hfe Min:","Value":"82"},{"Name":" Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":" Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Maximum Power Dissipation:","Value":"0.5 W"},{"Name":"","Value":""}]

Manufacturer information

INFINEON TECHNOLOGIES AG
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