Low collector-emitter saturation voltage VCE(sat) High transition frequency fT
Parameter Collector-base voltage (Emitter open) 2SB0621 2SB0621A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating �C V
Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0621 2SB0621A VEBO ICBO * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob = -10 �A, = 0 VCB = 0 VCE -500 mA VCE = -500 mA, = -500 mA, -50 mA VCB = 50 mA, = 200 MHz VCB = 1 MHz VCEO = -2 mA, = 0 Symbol VCBO Conditions = -10 �A, = 0 Min �A V MHz pF V Typ Max Unit V
Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification Rank to 340Note) The part numbers in the parenthesis show conventional part number.
Collector output capacitance C (pF) (Common base, input open circuited) ob