2SC1050 Datasheet

Silicon Epitaxial Planar Transistor ( General Description )


Features, Applications

Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time

PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature

PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency = 5MHz Collector capacitance 1MHz On times Tum-off storage time Fall time

Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com



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