Homedatasheet2SC1515K

2SC1515K Datasheet

Silicon NPN Triple Diffused
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Description

Features, Applications

Application

Item Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VEBO PC Tj Tstg Ratings to +150 Unit mW �C

Item Symbol Min Typ Max V MHz pF Unit V �A Test conditions = 10 �A, RBE mA, RBE 10 �A, = 0 VCB = 0 VCE = 10 mA, = 10 mA, 1 mA VCE 10 mA VCB = 1 MHz Collector to emitter breakdown V(BR)CES voltage V(BR)CEO Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE VCE(sat) VBE(sat) fT Cob

Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics �A IB Ambient Temperature Ta (�C) Collector to Emitter Voltage VCE (V)

Collector Cutoff Current vs. Ambient Temperature 1,000 Collector Cutoff Current ICBO (nA) VCB V 100
DC Current Transfer Ratio vs. Collector Current VCE V DC Current Transfer hFE 80

Features

Parameters

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