Homedatasheet2SC1815

2SC1815 Datasheet

Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 400mW, Vceo : 50V, ic : 150mA
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Description

Features, Applications
Features

2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking Code: C1815

Symbol Parameter Collector-Emitter Breakdown Voltage* IB =0) Collector-Base Breakdown Voltage IE =0) Emitter-Base Voltage (IE =310mAdc) Collector Cutoff Current IE =0Adc) Collector Cutoff Current IE =0Adc) Emitter Cutoff Current (VEB IC=0Adc) DC Current Gain* V CE=6.0Vdc) Collector-Emitter Saturation Voltage IB =10mAdc) Base-Emitter Saturation Voltage IB =10mAdc) Base-Emitter Voltage (IE=310mAdc) Transistor Frequency Y 120-240 Min Max Units Vdc

V(BR)CEO V(BR)CBO VBEF ICBO ICEO IEBO

Features

Parameters

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