Homedatasheet2SC2879

2SC2879 Datasheet

NPN SILICON RF POWER TRANSISTOR
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Description

The 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. 2SC2879 Features • PG = 13 Typ. min. at 100 W/28 MHz• IMD3 = -24 dBc max. at 100 W(PEP)• Omnigold™ Metalization System
Features

Parameters

[{"Name":"Maximum Collector-Base Voltage VCBO","Value":"45 V"},{"Name":"Maximum Collector-Emitter Voltage VCES","Value":"45 V"},{"Name":"Maximum Collector- Emitter Voltage VCEO","Value":"18 V"},{"Name":"Maximum Emitter-Base Voltage VEBO","Value":"4 V"},{"Name":"Maximum Collector Current IC","Value":"25 A"},{"Name":"Maximum Collector Power Dissipation PC","Value":"250 W"},{"Name":"Maximum Junction Temperature Tj","Value":"175 °C"},{"Name":"Maximum Storage Temperature Range Tstg","Value":"– 65 to 175 °C"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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