2SC3354 Datasheet

High-Frequency for Tuners


Features, Applications


Optimum for high-density mounting Allowing supply with the radial taping High transition frequency fT

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Rating to +150 Unit mW �C

Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common base) Reverse transfer capacitance (Common emitter) Power gain Symbol VCBO VEBO VBE hFE fT Crb Cre GP Conditions = 100 �A, = 10 �A, = 0 VCB -2 mA VCB -2 mA VCB = -15 mA, = 200 MHz VCE = 1 MHz VCB = -1 mA, = 10.7 MHz VCB = -1 mA, = 100 MHz Min Typ Max Unit V mV MHz pF dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification Rank hFE 1 600

Collector output capacitance C (pF) (Common base, input open circuited) ob
Reverse transfer capacitance Cre (pF) (Common emitter)



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