Homedatasheet2SC3357

2SC3357 Datasheet

RF Transistors (BJT)
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Description

The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic. 2SC3357 Features • Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,IC = 7 mA, f = 1.0 GHzNF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,IC = 40 mA, f = 1.0 GHz• Large PT in Small PackagePT : 2 W with 16 cm2× 0.7 mm Ceramic Substrate.
Features

Parameters

[{"Name":"Packaging","Value":"Tape & Reel (TR)"},{"Name":"Transistor Type","Value":"NPN"},{"Name":"Voltage - Collector Emitter Breakdown (Max)","Value":"12V"},{"Name":"Frequency - Transition","Value":"6.5GHz"},{"Name":"Noise Figure (dB Typ @ f)","Value":"1.4dB @ 1GHz"},{"Name":"Power - Max","Value":"2W"},{"Name":"DC Current Gain (hFE) (Min) @ Ic, Vce","Value":"50 @ 20mA, 10V"},{"Name":"Current - Collector (Ic) (Max)","Value":"100mA"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SILICON LABORATORIES
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