2SC3357 Datasheet

RF Transistors (BJT)


The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic. 2SC3357 Features • Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,IC = 7 mA, f = 1.0 GHzNF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,IC = 40 mA, f = 1.0 GHz• Large PT in Small PackagePT : 2 W with 16 cm2× 0.7 mm Ceramic Substrate.


[{"Name":"Packaging","Value":"Tape & Reel (TR)"},{"Name":"Transistor Type","Value":"NPN"},{"Name":"Voltage - Collector Emitter Breakdown (Max)","Value":"12V"},{"Name":"Frequency - Transition","Value":"6.5GHz"},{"Name":"Noise Figure (dB Typ @ f)","Value":"1.4dB @ 1GHz"},{"Name":"Power - Max","Value":"2W"},{"Name":"DC Current Gain (hFE) (Min) @ Ic, Vce","Value":"50 @ 20mA, 10V"},{"Name":"Current - Collector (Ic) (Max)","Value":"100mA"},{"Name":"","Value":""},{"Name":"","Value":""}]

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