Homedatasheet2SC3646

2SC3646 Datasheet

NPN Epitaxial Planar Silicon Transistor, High-voltage Switching, Predriver Application
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Description

Features, Applications

Features

Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching time. Very small size making it easy to provide highdensity, small-sized hybrid ICs.

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) IC=(�)400mA, IB=(�)40mA tstg tf See specified Test Circuit. See specified Test Circuit. V(BR)CBO IC=(�)10�A, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO IE=(�)10�A, IC=0 ton See specified Test Circuit. 0.4 (�)1.2 Conditions Ratings min typ max (�)100 400* MHz pF ns Unit nA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
(For PNP, the polarity is reversed) Unit (resistance : , capacitance : F)

Features

Parameters

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Manufacturer information

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