Homedatasheet2SC3776

2SC3776 Datasheet

NPN Epitaxial Planar Silicon Transistor, Unf Oscillator, Mixer, Low-noise Amp, Wide-band Amp Application
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Description

Features, Applications

UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
Applications
UHF frequency converters, local oscillators, lownoise amplifiers, wide-band amplifiers.
Features

Small noise figure : NF=2.5dB typ (f=0.9GHz). High power gain : MAG=12dB typ (f=0.9GHz). High cutoff frequency : fT=3.0GHz typ.

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO PC Tj Tstg Conditions Ratings to +150 Unit mA mW

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre VCB=10V, f=1MHz Conditions Ratings min typ max 10 200* GHz pF Unit �A

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Forward Transfer Gain Maximum Available Power Gain Noise Figure Symbol S21e |2 MAG NF Conditions IC=3mA, f=0.9GHz, See specified Test Circuit. Ratings min 7 typ 12 2.5 max Unit dB


Features

Parameters

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Manufacturer information

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