2SC3986 Datasheet

NPN Epitaxial Planar Silicon Transistor, Driver Application


Features, Applications

Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).

High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60�10V between collector and base. Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. High inductive load handling capability. Micaless package facilitating mounting.


Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) IC=1A, IB=4mA MHz V Conditions Ratings min typ max 10 2 Unit �A mA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Inductive Load Handling Capability Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO IC=0.1mA, IE=0 V(BR)CEO IC=1mA, RBE= Es/b ton tstg L=100mH, RBE=100 See specified Test Circuit. IC=1A, IB1=�IB2=4mA See specified Test Circuit. IC=1A, IB1=�IB2=4mA See specified Test Circuit. IC=1A, IB1=�IB2=4mA Conditions Ratings min typ 60 max 70 Unit mJ �s



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