High breakdown voltage and high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process.Specifications
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO 15* 10 Conditions Ratings min typ max 10 50* Unit �A
* : The hFE1 of the 2SC4108 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
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Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) VCB=10V, f=1MHz Conditions Ratings min typ max 0.8 1.5 Unit V MHz pF �s