Homedatasheet2SC4132T100P

2SC4132T100P Datasheet

Transistors
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Description

Transistors Bipolar ( 2SC4132T100P ) - BJT DVR NPN 120V 1.5A 2SC4132T100P Features • High breakdown voltage. (BVCEO = 120V) • Low collector output capacitance. (Typ. 20pF at VCB = 10V) • High transition frequency. (fT = 80MHz) • Complements the 2SB1236.
Features

Parameters

[{"Name":"Collector- Base Voltage VCBO:","Value":"120 V"},{"Name":" Collector- Emitter Voltage VCEO Max:","Value":"120 V"},{"Name":" Emitter- Base Voltage VEBO:","Value":"5 V"},{"Name":" Maximum DC Collector Current:","Value":"2 A"},{"Name":" Gain Bandwidth Product fT:","Value":"80 MHz"},{"Name":"DC Collector/Base Gain hfe Min:","Value":"82 at 0.1 A at 5 V"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Maximum Power Dissipation:","Value":"2000 mW"},{"Name":"","Value":""}]

Manufacturer information

DALLAS SEMICONDUCTOR
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