Fast switching speed. High gain-bandwidth product. Low saturation voltage.
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE 700 (400) Conditions Ratings min typ max MHz Unit �A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
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Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Delay Time Rise Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) Conditions IC=(�)10mA, IB=(�)1mA Ratings min typ V(BR)CBO IC=(�)10�A, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO td tr tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit (�)1.0 (�)0.2 max Unit pF ns
Marking : GT hFE rank 2SC4168 5IB1=�5IB2=IC=50mA (For PNP, the polarity is reserved.) Unit (reisistance : , capacitance : F)