Homedatasheet2SC4168

2SC4168 Datasheet

NPN Epitaxial Planar Silicon Transistor, High-voltage Switching Application
Share:
Manufacturer

Description

Features, Applications

Features
Fast switching speed. High gain-bandwidth product. Low saturation voltage.
Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE 700 (400) Conditions Ratings min typ max MHz Unit �A

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Delay Time Rise Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) Conditions IC=(�)10mA, IB=(�)1mA Ratings min typ V(BR)CBO IC=(�)10�A, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO td tr tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit (�)1.0 (�)0.2 max Unit pF ns

Marking : GT hFE rank 2SC4168 5IB1=�5IB2=IC=50mA (For PNP, the polarity is reserved.) Unit (reisistance : , capacitance : F)


Features

Parameters

Download DataSheet PDF View and Download


Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us

+86-755-83536845

One to One Customer Service

17190417227