2SC4299 Datasheet

Silicon NPN Triple Diffused Planar Transistor


Features, Applications

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings

Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25�C) Unit �C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=10V, f=1MHz
Collector-Emitter Saturation Voltage (V ) Base-Emitter Saturation Voltage E (s at) (V) B =5)

1 Without Heatsink Natural Cooling L=3mH IB2=�1.0A Duty:less than 1%



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