Homedatasheet2SC4650

2SC4650 Datasheet

NPN Epitaxial Planar Silicon Transistor High-definition Ctr-display Video Output Application
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Description

Features, Applications

Features

High breakdown voltage : VCEO200V. Small reverse transfer capacitance and excellent high frequency characteristic: Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes.

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) IC=(�)20mA, IB=(�)2mA Conditions Ratings min typ max (�)0.1 320 MHz pF V Unit �A

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol V(BR)CBO IC=(�)10�A, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO


Features

Parameters

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Manufacturer information

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