Homedatasheet2SC4655

2SC4655 Datasheet

High-Frequency Amplifiers
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Description

Features, Applications

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Rating to +125 Unit mW �C

Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Features

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common emitter) Symbol VCBO VCEO VEBO hFE fT Cre Conditions = 10 �A, = 2 mA, = 10 �A, = 0 VCE 1 mA VCB = -1 mA, = 200 MHz VCB = -1 mA, = 10.7 MHz Min Typ Max Unit V MHz pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification Rank hFE to 250



Reverse transfer capacitance Cre (pF) (Common emitter)
Collector output capacitance C (pF) (Common base, input open circuited) ob


Features

Parameters

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