Homedatasheet2SC4727

2SC4727 Datasheet

NPN Epitaxial Planar Silicon Transistor, 20V/8A Switching Application
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Description

Features, Applications

Features

Adoption of MBIT process. Low saturation voltage. Fast switching speed. Large current capacity. It is possible to make appliances more compact because its height on board is 9.5mm. Effective in automatic inserting and counting stocked amount because of being provided for radial taping.

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE2 fT VCE(sat) VBE(sat) IC=5A, IB=250mA Conditions Ratings min typ max MHz V 400* Unit �A

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCB=10V, f=1MHz V(BR)CBO IC=10�A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg IE=10�A, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. Conditions Ratings min typ 60 max Unit V ns


Features

Parameters

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Manufacturer information

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