Homedatasheet2SC4793DS

2SC4793DS Datasheet

Amplifier
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Description

Features, Applications

Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications
Features High Transistion: = 100MHz Complementary to 2SA1837 Absolute Maximum Ratings (Ta = 25�C)

Collector-Base Voltage Collector-Emitter Voltage Collector-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 25�C Tj Tstg

Collector Cut-off Current Emitter Cut-off Current Collector-Emmitter Breakdown Voltage DC Current Gain Collector-Emmitter Saturation Voltage Base-Emitter Voltage Transistion Frequency Collector Output Capacitance

The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.


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