NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
The is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.FEATURES
Low Voltage Use. High fT Low Cre Low : 12.0 GHz TYP. VCE = 10 mA, = 2 GHz) 0.4 pF TYP. VCE = 1 MHz) 1.5 dB TYP. VCE = 3 mA, = 2 GHz)High 8.5 dB TYP. VCE = 10 mA, = 2 GHz) Ultra Super Mini Mold Package.
PACKING STYLE Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO PT Tj Tstg mW �C
Document No. P10389EJ2V0DS00 (2nd edition) (Previous No. TD-2401) Date Published July 1995 P Printed in Japan
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF MIN. TYP. MAX. 0.1 150 GHz pF dB UNIT TEST CONDITIONS VCB = 0 VEB = 0 VCE 10 mA*1 VCE = 10 mA, = 2 GHz VCE IE MHz*2 VCE = 10 mA, = 2 GHz VCE = 3 mA, = 2 GHz
*1 Pulse Measurement PW 350 �s, Duty Cycle % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 Free Air 50 VCE 40 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE