Homedatasheet2SC5338

2SC5338 Datasheet

NPN Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier
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Description

Features, Applications

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION

The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such.

FEATURES

Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO PT Tj Tstg

Note 16 cm double sided ceramic substrate (Copper plaiting)
Document No. P10940EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Nose Figure 2nd Order Intermoduration Distortion 3rd Order Intermoduration Distortion Symbol ICBO IEBO hFE fT Cre NF IM2

Notes 2. Pulse measurement: PW 350 �S, Duty Cycle % 3. Mesured a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.



Features

Parameters

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Manufacturer information

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