2SC5472 Datasheet

Silicon NPN Epitaxial Planer Type ( For Low-voltage Low-noise High-frequency Oscillation )


Features, Applications

High transition frequency fT High gain 8.2 dB and low noise 3 V Optimum for RF amplification of a portable telephone and pager S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Rating to +150 Unit mW �C

Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Noise figure Symbol ICBO IEBO hFE fT Cob NF |2 Conditions VCB = 0 VEB = 0 VCE 10 mA VCE = 10 mA, = 2 GHz VCB = 1 MHz VCE = 10 mA, = 2 GHz VCE = 3 mA, = 1.5 GHz Min Typ Max 1 200 GHz pF dB Unit �A



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