2SC5658RM3T5G Datasheet

Transistors Bipolar - BJT


This 2SC5658RM3T5G is NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2SC5658RM3T5G Features &bull; Reduces Board Space&bull; High hFE, 210 &minus;460 (typical)&bull; Low VCE(sat), < 0.5 V&bull; ESD Performance: Human Body Model;  2000 V, Machine Model;  200 V&bull; Available in 8 mm, 7-inch/3000 Unit Tape and Reel&bull; These are Pb&minus;Free Devices


[{"Name":"Configuration","Value":"Single "},{"Name":"Collector- Base Voltage VCBO","Value":"50 V "},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"50 V "},{"Name":"Emitter- Base Voltage VEBO","Value":"5 V "},{"Name":"Collector-Emitter Saturation Voltage","Value":"0.4 V "},{"Name":"Gain Bandwidth Product fT","Value":"180 MHz "},{"Name":"DC Collector/Base Gain hfe Min","Value":"120 "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOT-723 "},{"Name":"Packaging","Value":"Reel "}]

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