High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
High DC current gain: hFE to 1000 (IC 0.5 A) Low collector-emitter saturation voltage: VCE (sat) 0.15 V (max) High-speed switching: 50 ns (typ.) Industrial Applications Unit: mm
Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating to 150 Unit W �C
Note 1: Mounted an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 0 VEB = 10 mA, = 0 VCE 0.5 A VCE 32 mA VCB = 1 MHz See Figure 1 circuit diagram. VCC 53 mA Min 400 200 Typ. Max V pF Unit nA VA line indicates lead (Pb)-free package or lead (Pb)-free finish.
Switching Time Test Circuit & Timing Chart
6 Common emitter = 25�C Single nonrepetitive pulse 10000 Common emitter VCE 2 V Single nonrepetitive pulse = 100�C
Common emitter IC/IB = 50 Single nonrepetitive pulse