Homedatasheet2SD1126

2SD1126 Datasheet

Silicon NPN Triple Diffused
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Description

Features, Applications

Application
1 Base 2. Collector (Flange) 3. Emitter 1.5 k (Typ) 130 (Typ) 3

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature to E diode forward current Note: 1. Value = 25�C. Symbol VCBO VCEO VEBO IC I C(peak) * Tj Tstg ID

Item Symbol Min 7 1000 Typ 0.8 8.0 Max �s Unit V �A Test conditions = 25 mA, RBE 200 mA, = 0 VCB = 0 VCE 100 V, RBE = VCE 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE on t off

Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 IC (max) 3 iC (peak) Area of Safe Operation

DC Current Transfer Ratio vs. Collector Current 30,000 DC current transfer ratio hFE VCE 3 V Pulse

Features

Parameters

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