2SD1213 Datasheet

NPN Epitaxial Planar Silicon Transistor, 30V/20A High-speed Switching Application


Features, Applications

Large current switching of relay drivers, high-speed inverters, converters.

Low collector-to-emitter saturation voltage : VCE(sat)=�0.5V (PNP), 0.4V (NPN) max. Large current capacity.


Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 VCE(sat) IB=(�)0.4A V Conditions Ratings min typ max (�)0.1 280* Unit mA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Parameter Gain-Bandwidth Product Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions Ratings min tf See specified Test Circuit 20 typ 120 max Unit MHz V ns

VCE=(�)5V, IC=(�)1A V(BR)CBO IC=(�)1mA, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO ton tstg IE=(�)1mA, IC=0 See specified Test Circuit See specified Test Circuit



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