2SD1892 Datasheet

Silicon NPN Triple Diffusion Planar Type Darlington ( For Power Amplification )


Features, Applications

Silicon NPN triple diffusion planar type Darlington

Optimum for 35W HiFi output High foward current transfer ratio hFE: to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25�C)

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25�C dissipation Ta=25�C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP PC Tj Tstg

Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time

Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 1A VCE = 4mA VCE = �4mA, VCC 50V V MHz �s min typ max 100 Unit �A V

6 (1) TC=Ta (2) With 2mm Al heat sink (3) With 2mm Al heat sink (4) Without heat sink 2 0.2mA

10000 Note: Rth was measured at Ta=25�C and under natural convection. 0.2A (2W) and without heat sink 1.0A (10W) and with 2mm Al heat sink



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