Homedatasheet2SD2121L

2SD2121L Datasheet

Silicon NPN Epitaxial
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Description

Features, Applications

Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value = 25�C. Symbol VCBO VCEO VEBO IC I C(peak) * Tj Tstg

Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 5

Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat)

Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 10
Case temperature TC (�C) Collector to emitter voltage VCE (V)

Typical Output Characteristics 2.0 DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE

Collector to Emitter Saturation Voltage vs. Collector Current 1.0 2.0

Features

Parameters

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