High collector-emitter voltage (Base open) VCEO Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating +150 cm2 Unit �C
Note) Printed circuit board: Copper foil area 1 or more, and the board thickness 1.7 mm for the collector portion
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE2 *1 VCE(sat) VBE(sat) fT Cob Conditions = 10 �A, = 1 mA, = 10 �A, = 0 VCB = 0 VCE 100 mA VCE = 500 mA, = 500 mA, 25 mA VCB = -50 mA, = 200 MHz VCB = 1 MHz V MHz pF Min Typ Max Unit V �A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank to 3401.2 Copper plate at the collector is more than cm2 in area, mm in thickness
Collector output capacitance C (pF) (Common base, input open circuited) ob
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