2SH18 Datasheet

Silicon N-channel Igbt


Features, Applications


Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings to +150 Unit �C

Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES Min 600 Typ Max Unit Test conditions = 100 �A, VGE = 0 VCE 600 V, VGE = 0 VGE �20 V, VCE = 0



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