Homedatasheet2SJ450

2SJ450 Datasheet

Silicon P-channel MOSFET
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Description

Features, Applications

Application
Features
Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg

Notes: PW 100 �s, duty cycle 10% 2. When using aluminium ceramic board mm)

Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min Typ Max Unit �1 A, VGS �1 A, VGS = 0 diF/dt = 50A/�s Test conditions = �10 mA, VGS �100 �A, VDS = 0 VDS �50 V, VGS = 0 VGS �16 V, VDS = 0 VDS �0.5 A VGS �0.3 A VGS �0.5 A VDS �10 V VDS �10 V VGS MHz VGS = 60

Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Fowerd transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Marking is "UY". I GSS VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr


Features

Parameters

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Manufacturer information

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