Homedatasheet2SK1625L

2SK1625L Datasheet

Silicon N-channel MOSFET
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Description

Features, Applications

Application
Features

Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes PW 10 �s, duty cycle 1% 2. Value = 25�C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg

Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min Typ Max Unit ns A, VGS A, VGS = 0, diF/dt = 100 A/�s A, VGS = 7.5 Test conditions = 10 mA, VGS �100 �A, VDS = 0 VGS �25 V, VDS = 0 VDS 500 V, VGS mA, VDS 10 A, VGS *1 A, VDS V *1 VDS 10 V, VGS = 1 MHz

Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr


Features

Parameters

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Manufacturer information

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