Homedatasheet2SK170

2SK170 Datasheet

Low Noise Audio Amplifier Applications
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Description

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier) Features • Recommended for first stages of EQ and M.C. head amplifiers.• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)• High breakdown voltage: VGDS = −40 V• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Features

Parameters

[{"Name":"Gate-drain voltage VGDS","Value":"-40 V"},{"Name":"Gate current IG","Value":"10 mA"},{"Name":"Drain power dissipation PD","Value":"400 mW"},{"Name":"Junction temperature Tj","Value":"125 °C"},{"Name":"Storage temperature range Tstg","Value":"-55~125 °C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

MOSPEC [MOSPEC SEMICONDUCTOR]
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