2SK2050 Datasheet

N-channel MOS-FET


Features, Applications

High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance

- Motor Control - General Purpose Power Amplifier - DC-DC converters
- Absolute Maximum Ratings (TC=25�C), unless otherwise specified

Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol DS V DGR ID I D(puls) ch T stg Rating Unit �C

Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS

This specification is subject to change without notice!



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