The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES
2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings
Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 �C) Total Power Dissipation (Ta = 25 �C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy**
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.Document No. TC-2505 (O.D. No. TC-8064 Date Published January 1995 P Printed in Japan
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.2 0.22 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MAX. V S UNIT TEST CONDITION VGS 2SK2371 2SK2372
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power PT - Total Power Dissipation - (W) TOTAL POWER DISSIPATION vs. CASE TEMPERATURETC - Case Temperature - (�C) FORWARD BIAS SAFE OPERATING AREA 1 000
TC - Case Temperature - (�C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 VGS ID - Drain Current - (A) 8V 6V PulsedVDS - Drain to Source Voltage - (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100