Homedatasheet2SK2401

2SK2401 Datasheet

FETs - Single
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Description

The description of the 2SK2401 is MOSFET N-CH 200V 15A TO-220SM 2SK2401 Features • Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.)• High forward transfer admittance : |Yfs| = 17 S (typ.)• Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)• Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"200V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"15A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"180 mOhm @ 10A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"3.5V @ 1mA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"40nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"2000pF @ 10V"},{"Name":"Power - Max","Value":"75W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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