Homedatasheet2SK2512

2SK2512 Datasheet

Switching N-channel Power MOSFET Industrial Use
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Description

Features, Applications

DESCRIPTION

The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter)

FEATURES

Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 �C) Total Power Dissipation (TA = 25 �C) Channel Temperature Storage Temperature PW 10 �s, Duty Cycle 1 %

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Document No. D10291EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan

CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on)1 RDS (on)2 VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr MIN. TYP. MAX. 23 2.0 UNIT TEST CONDITIONS VGS 23 A VGS 23 A VDS 1 mA VDS 23 A VDS = VDSS, VGS = 0 VGS 20 V, VDS = 0 VDS 10 V VGS MHz 23 A VGS (on) 10 V VDD 45 A VDD 48 V VGS 45 A, VGS 45 A, VGS = 0 di/dt = 100 A/�s

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

TC - Case Temperature - �C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed


Features

Parameters

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Manufacturer information

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