This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES
27 m Max. (VGS 40 m Max. (VGS = 18 A) Low Ciss 200 pF Typ. Built-in G-S Protection Diode Isolated TO-220 package
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Total Power Dissipation (TA = 25 �C) Total Power Dissipation (TC = 25 �C) Channel Temperature Storage Temperature PW 10 �s, duty cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg +150 �C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Document No. D10515EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan
CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 35 A, VGS 35 A, VGS = 0, di/dt = 100 A/�s 35 A, VDD 48 V, VGS 18 A, VGS(on) 10 V, VDD = 10 TEST CONDITION VGS 18 A VGS 18 A VDS 1 mA VDS 18 A VDS 60 V, VGS = 0 VGS 20 V, VDS = 0 VDS 10 V, VGS = 1 MHz MIN. TYP. MAX. 40 2.0 UNITDERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - �C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200