2SK2940L Datasheet

Silicon N-channel MOSFET High Speed Power Switching


Features, Applications
Silicon N Channel MOS FET High Speed Power Switching

Low on-resistance DS =0.010 typ. High speed switching 4V gate drive device can be driven from 5V source

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I AP

Item Symbol Min Typ Max Unit = 45A, VGS 45A, VGS = 0 diF/ dt =50A/�s Test Conditions = 10mA, VGS �100�A, VDS = 0 VGS = �16V, VDS = 0 VDS 60 V, VGS 1mA, VDS = 20A, VGS = 20A, VGS = 20A, VDS 10V Note4 VDS = 10V VGS = 20A, VGS = 1.5 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body�drain diode forward voltage Body�drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr



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