This product is N-Channel MOS Field Effect Transistor designed for high current switching application.FEATURES
Low on-resistance 20 m (MAX.) (VGS 27 m (MAX.) (VGS = 15 A) Low Ciss 1200 pF TYP. Built-in gate protection diodeDrain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Total Power Dissipation (TA = 25�C) Total Power Dissipation (TC = 25�C) Channel Temperature Storage Temperature Notes1. VGS V 2. VDS � s, Duty Cycle 1The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition) Date Published October NS CP (K) Printed in Japan
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 30 A VDD 24 V VGS 30 A, VGS 30 A, VGS 0 V di/dt 100 A /�S TEST CONDITIONS VGS 15 A VGS 15 A VDS 1 mA VDS 15 A VDS 30 V, VGS 0 V VGS �20 V, VDS 0 V VDS 10 V VGS MHz 15 A VGS(on) 10 V VDD V RG MIN. TYP. MAX. 27.0 2.0 UNITDERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - �C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed