Homedatasheet2SK2983

2SK2983 Datasheet

Switching N-channel Power MOSFET Industrial Use
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Description

Features, Applications

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

FEATURES

Low on-resistance 20 m (MAX.) (VGS 27 m (MAX.) (VGS = 15 A) Low Ciss 1200 pF TYP. Built-in gate protection diode

Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

Total Power Dissipation (TA = 25�C) Total Power Dissipation (TC = 25�C) Channel Temperature Storage Temperature Notes1. VGS V 2. VDS � s, Duty Cycle 1

The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition) Date Published October NS CP (K) Printed in Japan

CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 30 A VDD 24 V VGS 30 A, VGS 30 A, VGS 0 V di/dt 100 A /�S TEST CONDITIONS VGS 15 A VGS 15 A VDS 1 mA VDS 15 A VDS 30 V, VGS 0 V VGS �20 V, VDS 0 V VDS 10 V VGS MHz 15 A VGS(on) 10 V VDD V RG MIN. TYP. MAX. 27.0 2.0 UNIT

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - �C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed


Features

Parameters

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Manufacturer information

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