This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES
Low On-State Resistance 34 m MAX. (VGS 50 m MAX. (VGS = 16 A) Low Ciss : Ciss 920 pF TYP. Built-in Gate Protection Diode
Drain to Source Voltage (VGS 0 V) Gate to Source Voltage (VDS 0 V) Gate to Source Voltage (VDS 0 V) Drain Current (DC) Drain Current (Pulse)VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT Tch Tstg
Total Power Dissipation (TC = 25�C) Total Power Dissipation (TA = 25�C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche EnergyChannel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.68 83.3 �C/W
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Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.Document No. D13095EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS 16 A VGS 16 A VDS 1 mA VDS 16 A VDS 60 V, VGS 0 V VGS �20 V, VDS 0 V VDS 10 V VGS MHz 16 A VGS(on) 10 V VDD 32 A VDD 48 V VGS 32 A, VGS = 32A, VGS 0 V di/dt = 100A/�s MIN. TYP. MAX. 50 2.0 UNITDERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - �C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80