Homedatasheet2SK3076L

2SK3076L Datasheet

Silicon N-channel MOSFET High Speed Power Switching
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Description

Features, Applications
Silicon N Channel MOS FET High Speed Power Switching

Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns)

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)

Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: PW 10�s, duty cycle % 2. Value 25� C Pch Tch Tstg

Item Symbol Min �30 2.0 Typ 0.7 Max Unit �A V Test Conditions = 10mA, VGS �100�A, VDS = 0 VGS = �25V, VDS = 0 VDS 400 V, VGS 1mA, VDS = 4A, VGS = 4A, VDS 10V Note4 VDS = 10V VGS D =4A, VGS = 7.5 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) = 7A, VGS 7A, VGS = 0 diF/ =100A/�s I GSS I DSS VGS(off) RDS(on)

Body�drain diode forward voltage VDF Body�drain diode reverse recovery time Note: 4. Pulse test t rr



Features

Parameters

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