2SK3482 Datasheet

FETs - Single


The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. 2SK3482 Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 3600 pF TYP.• Built-in gate protection diode• TO-251/TO-252 package 2SK3482 Applications • Drain to Source Voltage (VGS = 0 V) VDSS 100 V• Gate to Source Voltage (VDS = 0 V) VGSS ±20 V• Drain Current (DC) ID(DC) ±36 A• Drain Current (Pulse) Note1 ID(pulse) ±100 A• Total Power Dissipation (TC = 25°C) PT 50 W• Total Power Dissipation (TA = 25°C) PT 1.0 W• Channel Temperature Tch 150 °C• Storage Temperature Tstg –55 to +150 °C• Single Avalanche Current Note2 IAS 30 A• Single Avalanche Energy Note2 EAS 90 mJ


[{"Name":"Drain to Source Voltage (Vdss)","Value":"100V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"36A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"33 mOhm @ 18A, 10V"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"72nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"3600pF @ 10V"},{"Name":"Power - Max","Value":"1W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service