2SK3482 Datasheet

FETs - Single


The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. 2SK3482 Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 3600 pF TYP.• Built-in gate protection diode• TO-251/TO-252 package 2SK3482 Applications • Drain to Source Voltage (VGS = 0 V) VDSS 100 V• Gate to Source Voltage (VDS = 0 V) VGSS ±20 V• Drain Current (DC) ID(DC) ±36 A• Drain Current (Pulse) Note1 ID(pulse) ±100 A• Total Power Dissipation (TC = 25°C) PT 50 W• Total Power Dissipation (TA = 25°C) PT 1.0 W• Channel Temperature Tch 150 °C• Storage Temperature Tstg –55 to +150 °C• Single Avalanche Current Note2 IAS 30 A• Single Avalanche Energy Note2 EAS 90 mJ


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Manufacturer information


Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today. In an era where diversity can dilute focus and hamper innovation, we specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions for the mobile, industrial, cloud, automotive, lighting, and computing industries. Fairchild is one of the most reliable partners in the industry, offering the shortest time from concept to silicon, expert FAEs for customer support, and a flexible, multi-source supply chain. Our vision is clear – anticipate the power efficiencies demanded by tomorrow’s electronic products and deliver an amazing design experience

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