Homedatasheet2SK3482

2SK3482 Datasheet

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Description

The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. 2SK3482 Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 3600 pF TYP.• Built-in gate protection diode• TO-251/TO-252 package 2SK3482 Applications • Drain to Source Voltage (VGS = 0 V) VDSS 100 V• Gate to Source Voltage (VDS = 0 V) VGSS ±20 V• Drain Current (DC) ID(DC) ±36 A• Drain Current (Pulse) Note1 ID(pulse) ±100 A• Total Power Dissipation (TC = 25°C) PT 50 W• Total Power Dissipation (TA = 25°C) PT 1.0 W• Channel Temperature Tch 150 °C• Storage Temperature Tstg –55 to +150 °C• Single Avalanche Current Note2 IAS 30 A• Single Avalanche Energy Note2 EAS 90 mJ
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"100V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"36A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"33 mOhm @ 18A, 10V"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"72nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"3600pF @ 10V"},{"Name":"Power - Max","Value":"1W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

FAIRCHILD SEMICONDUCTOR
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