2SK3499 Datasheet

VDDS = 400 ;; Id = 10 ;; Package Type = TFP


Features, Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
Switching Regulator and DC-DC Converter Applications Motor Drive Applications

Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: Yfs 8.0 S (typ.) Low leakage current: IDSS 100 �A (max) (VDS 400 V) Enhancement-model: Vth 4.0 V (VDS = 1 mA) Unit: mm

Characteristics Drain-source voltage Drain-gate voltage (RGS 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating to150 Unit mJ �C

Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit �C/W

Note 1: Please use devices on condition that the channel temperature is below 150�C. Note 2: VDD 90 V, Tch = 25�C (initial), = 5.85 mH, 25 , IAR 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.

Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 320 V, VGS 10 A Duty 10 �s VDD 200 V Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 5 A VOUT VDS 10 V, VGS = 1 MHz Test Condition VGS �25 V, VDS = �10 �A, VDS 0 V VDS 400 V, VGS = 10 mA, VGS 0 V VDS 1 mA VGS 5.0 A VDS 5.0 A Min Typ. Max nC pF Unit V S

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR 10 A, VGS 0 V IDR 10 A, VGS 0 V, dIDR/dt = 100 A/�s Min Typ. 350 3.6 Max 40 -1.7 Unit �s �C

Month (starting from alphabet A) Year (last number of the christian era)



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Manufacturer information

Warm Hint

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