Homedatasheet2SK3797QM

2SK3797QM Datasheet

Transistors
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Description

MOSFET MOSFET( 2SK3797 / 2SK3797QM ) N-Ch 600V 13A Rdson 0.43 Ohm 2SK3797QM Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"600 V"},{"Name":"Continuous Drain Current:","Value":"13 A"},{"Name":" Drain-Source On Resistance:","Value":"430 mOhms"},{"Name":"Fall Time:","Value":"215 ns"},{"Name":" Gate Charge Qg:","Value":"62 nC"},{"Name":"Power Dissipation:","Value":"50 W"},{"Name":"Rise Time:","Value":"110 ns"},{"Name":"Typical Turn-Off Delay Time:","Value":"50 ns"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

ESTEK [ESTEK ELECTRONICS CO. LTD]
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