Homedatasheet2SK4013

2SK4013 Datasheet

Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
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Description

Switching Regulator Applications


• Low drain-source ON resistance: RDS (ON)= 1.35 Ω(typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 640 V)
• Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Features

Parameters

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Manufacturer information

TOSHIBA
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